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RMPA0913C-58
3.5V AMPS/CDMA Power Amplifier
PRODUCT INFORMATION
Description
The RMPA0913C-58 is a monolithic high efficiency power amplifier for AMPS/CDMA dual mode applications in the 824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by "tweaking" off-chip matching components. The amplifier circuit design is a single ended configuration that utilizes harmonic tuning for increased power added efficiency and linearity.The device uses Raytheon's Pseudomorphic High Electron Mobility Transistor (pHEMT) process. Positive supply voltage of 3.5V, nominal Power Added Efficiency of 56%, typical, at power out of 31.5 dBm Power Added Efficiency of 40%, typical, for CDMA power out of 28.5 dBm Small outline metal based quad plastic package
Features
Absolute Maximum Ratings
Parameter Positive DC Voltage Negative DC Voltage Simultaneous (Vd-Vg) RF Input Power (from 50-Ohm source) Operating Case Temperature (Case) Storage Temperature Range Thermal Resistance
Symbol Vd1,Vd2 Vg1,Vg2 Vdg PIN TC TStg RTj-c
Value +9 -6 +12 +10 -30 to 110 -35 to 110 15
Units Volts Volts Volts dBm C C C/W
Electrical Characteristics
(Specifications at o 25 C operating free air temperature unless otherwise stated)
Parameter
Min
Typ
Max
Unit MHz dB dB/C dB dBm/Hz --dBc dBc dBm
Parameter Efficiency Pin = 7 dBm, Vdd= 3.5V Po = 31.5 dBm, Vdd = 3.5V Po = 28.5 dBm , Vdd= 3.5V Po = 10 dBm , Vdd= 3.5V ACPR 2 (Offset 900 kHz) (Offset 1.98 MHz) Noise Figure (over temp) Vdd Vg1, Vg2 (<4 mA)3 Case Operating Temp
Min
Typ 62 56 40 1.5 48 63 3.5
Max
Unit
Frequency Range 824 849 Gain (Small Signal) 30 Gain Variation vs Temp -0.02 Gain Linearity (0 dBm Pout 28.5 dBm) -1.5 +0.0 Noise Power (869-894 MHz) -140 Input VSWR (50) 2.0:1 -70 Stability (All spurious) 1 Harmonics (Po 31.5 dBm) -35 Power Out Vdd=3.5V, Pin=7 dBm 32.5
-1.75 -40
% % % % dBc dBc 4.5 dB Volts -0.25 Volts +85 C
Notes: 1. Source/Load VSWR (All Angles) 3:1 In-Band, Load VSWR (All Angles) 20:1 Out of Band, Valid over Case Operating Temperature Range. 2. Po 28.5 dBm at Vdd=3.5V; CDMA Waveform measured using the ratio of the average power within a 1.23 MHz channel and within a 30 kHz bandwidth at the specified offset. 3. Vg1 adjusted for Idq (stage 1) = 35 mA, Vg2 adjusted for Idq (stage 2) = 155 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 30, 2000 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA0913C-58
3.5V AMPS/CDMA Power Amplifier
PRODUCT INFORMATION
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. The following describes a procedure for evaluating the Raytheon RMPA0913C-58, a monolithic high efficiency power amplifier, in a surface mount package, designed for use in the AMPS/CDMA dual mode portable phones. Figure 1 shows the package outline and pin designations. Figure 2 shows the functional block diagram of the packaged product. It should be noted that the amplifier requires external passive components for DC bias and RF input and output matching circuits. A recommended schematic is shown in figure 3. The gate biases for the two stages of the amplifier are set by simple on-chip circuits. Figure 4 shows a typical layout of an evaluation board (RMPA0913C-58-TB), corresponding to the schematic circuit of figure 3. The following should be noted: (1) Pin designations and their functions are as shown in figure 1 and Table 1. (2) Vg1, Vg2 are denoted as the Gate Voltages (negative) applied at the pins of the package (3) Vgg1, Vgg2 are denoted as the negative supply voltages at the evaluation board terminals (4) Vd1, Vd2 are denoted as the Drain Voltages (positive) applied at the pins of the package (5) Vdd1, Vdd2 are denoted as the positive supply voltages at the evaluation board terminals
Note: The two drain voltages are tied to the same terminal denoted as Vdd on the evaluation board Figure 1 Package Information Dimensions in inches
TOP VIEW 0.200 SQ. 6 54 A 7 0.030 8 9 10 11 PLASTIC LID 0.010 0.230 0.246 0.282 0.069 MAX. SIDE SECTION 12 RAY
RMBA 0913C-58
BOTTOM VIEW
Pin #
Description
456 3 2 1 0.015 2 1 12 11 10 3 13 9 0.041 7 8
1 2 3 4 5 6 7 8 9 10 11 12 13
RF Out & Vd2 RF Out & Vd2 RF Out & Vd2 AC Ground (g2) GND AC Ground (g1) GND RF Input GND Vd1 Vg2 Vg1 GND (METAL BASE)
Figure 2 Functional Block Diagram of Packaged Product
RF IN Pin# 8
Vd1 Pin# 10
Ground Pin# 5, 7, 9, 13
AC Ground (g2) Pin# 4
RF OUT & Vd2 Pin# 1, 2, 3
AC Ground (g1) Vg1 Pin# 6 Pin# 12
Vg2 Pin# 11
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 30, 2000 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA0913C-58
3.5V AMPS/CDMA Power Amplifier
PRODUCT INFORMATION
Test Procedure
for the evaluation board (RMPA0913C-58)
CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2) WHILE DRAIN VOLTAGES (VD1,VD2) ARE PRESENT MAY DAMAGE THE AMPLIFIER. The following sequence must be followed to properly test the amplifier: Step 1: Turn off RF input power. Step 2: Use GND terminal of the evaluation board for the ground of the DC supplies. Slowly apply gate supply voltages of -3.0 V to the board terminals Vgg1, Vgg2 to pinch-off the two stages. Step 3: Slowly apply drain supply voltage of +3.5 V to the board terminals Vdd. Step 4: Adjust the gate supply voltages Vgg1, Vgg2 to the values shown on the data summary supplied with the sample. (First adjust Vgg2 to set Idq2. Then adjust Vgg1 to set Iddq=Idq1+Idq2. These gate voltages need not be changed. However, Vgg1,Vgg2 may be adjusted only when different quiescent bias currents are desired for performance trade-off evaluation). Step 5: After the bias condition is established, RF input signal may now be applied at the appropriate frequency band. Adjust RF input signal power level as required. Step 6: Follow turn-off sequence of: (i) Turn off RF Input Power (ii) Turn down and off drain voltage Vdd. (iii) Turn down and off gate voltages Vgg1, Vgg2.
Figure 3 Schematic for a Typical Test Evaluation Board
Evaluation Board Schematic Ver.6, 4/28/98 Board Type: Multi Layer FR4 Signal to Ground Separation: 0.016"
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 30, 2000 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA0913C-58
3.5V AMPS/CDMA Power Amplifier
PRODUCT INFORMATION
Figure 4 Layout and Assembly of Test Evaluation Board
Parts List
for Test Evaluation Board
Part C1,C3,C10 C2 C8 C9 C4,C5,C11,C12 C6,C7 L1 L2 L3 R1 W1 U1 P3 P1,P2 Board Value 47 pF 5.6 pF 6.2 pF 6.8 pF 1000 pF 1.5 uF 5.6 nH 22 nH 39 nH 10 Ohm 26AWG (0.015" dia) Wire RMPA0913C-58, 3.5V PA Right angle Pin Header SMA Connectors FR4 EIA Size 0402 0402 0402 0402 0402 3528 0603 0603 1008 0402 Vendor(s) Murata, GRM36COG470J050 Murata, GRM36COG5R6B050 Murata, GRM36COG6R2B050 Murata, GRM36COG6R8B050 Murata, GRM36X7R102K050 Kemet (T494B155K020AS) Toko, LL1608-FH5N6S Toko, LL608-FH22NK Coilcraft, 1008HS-390TKBC IMS, RCI-0402-10R0J Alpha, 2853/1 Raytheon, G654257 3M (2340-5211TN) Johnson Components (142-0701-841) Raytheon Dwg# G654626, V1
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 30, 2000 Page 4 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA0913C-58
3.5V AMPS/CDMA Power Amplifier
PRODUCT INFORMATION
Table 1
Further Important Application Information
Pin# 1
Function RF OUT AND VD2
Application hints An optimal output match for dual mode applications is set by connecting capacitors C8 and C9 to the package pin using approximately 0.233 inches of a 50 ohm transmission line. These capacitors should be located adjacent to each other and separated by 0.010 inches. Lower efficiency will result if a single capacitor of equivalent value were substituted. Fine adjust the capacitors location to obtain a uniform saturated output power response versus frequency using a single tone RF input. Saturated output power is typically measured at +7dBm input power and should be 32.3 to 32.5dBm with a 3.5 volt supply. This condition will yield typically 50dBc ACPR1 and 60dBc ACPR2 at 28.5dBm output power and a 3.5 volt supply using a CDMA waveform. If a greater than 50 ohm impedance transmission line is used to conserve space, transition the line to 50 ohms slightly prior to the optimum tuning point to avoid undesirable effects from the otherwise residual inductance following the tuning elements. Once the optimum tuning point has been established this remains fixed for all other amplifiers. For the dc bias injection circuit choose an inductor with a maximum series resistance rating of less than 0.15 ohms for best efficiency and overall performance versus supply voltage. The two 1.5uF tantalum bypass capacitors chosen for this circuit are low ESR type capacitors with a maximum rating of 1.5 ohms. The capacitor ESR is critical for achieving the best ACPR possible from the amplifier. Other capacitors may be substituted, although larger values may be necessary to achieve equivalent performance. These components should be placed at the tie point for VD1 and VD2 and as close to the amplifier as possible. Finally, connect pins 1-3 using one solid metal pad as opposed to three individual pads for each pin. Same as pin 1. Same as pin 1. Place component C12 0.080 inches from the package pin. Connect pin immediately to the package base solder pad. Place components R1 and C11 0.080 inches from the package pin. Same as pin 5. The amplifier input is optimally matched to 50 ohms by locating capacitor C2 at a distance of 0.138 inches from the package pin. If it is not possible to obtain this separation, adjust the value of inductor L1 to compensate and obtain the desired match. Same as pin 5. Place component C3 0.080 inches from the package pin. The dc resistance of inductor L2 should be 0.5 ohms to obtain optimum amplifier performance. Also, connect VD1 and VD2 at the board component surface and route VG1 and VG2 bias lines to other conductor layers to minimize any additional ohmic losses on the drain supply line. Connect to a low impedance negative voltage power supply for stage 2 current control. From pinchoff, adjust VG2 voltage to achieve 155mA of stage 2 current, ID2. This current is optimum for high power CDMA operation up to 28.5dBm output power. For improved performance, adjust to lower current for low power CDMA and analog modes of operation. Since both stage 1 and stage 2 drains contribute to the total amplifier current the first stage must be pinched off while adjusting VG2 for a specific ID2 current. A pinchoff condition is achieved by applying -2.0 to -5.0 volts to the gate pins, VG1 and VG2. Connect to a low impedance negative voltage power supply for stage 1 current control, ID1. From pinchoff, adjust VG1 voltage to achieve 35mA of stage 1 current. The solder pad for this package should be 0.210 inches square. Fill the pad with several plated-thru vias connecting the pad surface to the RF input and output ground planes. Insufficient grounding of the package base may cause the amplifier to oscillate or result in poor amplifier performance.
2 3 4 5 6 7 8
RF OUT AND VD2 RF OUT AND VD2 G2 AC GND GND G1 AC GND GND RF IN
9 10
GND VD1
11
VG2
12 13
VG1 PACKAGE BASE AND GND
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 30, 2000 Page 5 Raytheon RF Components 362 Lowell Street Andover, MA 01810
Worldwide Sales Representatives
PRODUCT INFORMATION
North America
D&L Technical Sales 6139 S. Rural Road, #102 Tempe, AZ 85283 480-730-9553 fax: 480-730-9647 Nicholas Delvecchio, Jr. dlarizona@aol.com Hi-Peak Technical Sales P.O. Box 6067 Amherst, NH 03031 866-230-5453 fax: 603-672-9228 sales@hi-peak.com
Spartech South 2115 Palm Bay Road, NE, Suite 4 Palm Bay, FL 32904 321-727-8045 fax: 321-727-8086 Jim Morris jim@spartech-south.com
TEQ Sales, Inc. 920 Davis Road, Suite 304 Elgin, IL 60123 847-742-3767 fax: 847-742-3947 Dennis Culpepper dculpepper@teqsales.com
Cantec Representatives 8 Strathearn Ave, No. 18 Brampton, Ontario Canada L6T 4L9 905-791-5922 fax: 905-791-7940 Dave Batten cantec-ott@cantec-o.net
Steward Technology 6990 Village Pkwy #206 Dublin, CA 94568 925-833-7978 fax: 925-560-6522 John Steward johnsteward1@msn.com
Europe
Sangus OY Lunkintie 21, 90460 Oulunsalo Finland 358-8-8251-100 fax: 358-8-8251-110 Juha Virtala juha.virtala@sangus.fi
Sangus AB Berghamnvagen 68 Box 5004 S-165 10 Hasselby Sweden Ronny Gustafson 468-0-380210 fax: 468-0-3720954
Globes Elektronik & Co. Klarastrabe 12 74072 Heilbronn Germany 49-7131-7810-0 fax: 49-7131-7810-20 Ulrich Blievernicht hfwelt@globes.de
MTI Engineering Ltd. Afek Industrial Park Hamelacha 11 New Industrial Area Rosh Hayin 48091 Israel 972-3-902-5555 fax: 972-3-902-5556 Adi Peleg adi_p@mti-group.co.il
Sirces srl Via C. Boncompagni, 3B 20139 Milano Italy 3902-57404785 fax: 3902-57409243 Nicola Iacovino nicola.iacovino@sirces.it
Asia
ITX Corporation 2-5, Kasumigaseki 3-Chome Chiyoda-Ku Tokyo 100-6014 Japan 81-3-4288-7073 fax: 81-3-4288-7243 Maekawa Ryosuke maekawa.ryosuke@ itx-corp.co.jp Headquarters 6321 San Ignacio Drive San Jose, CA 95119 408-360-4073 fax: 408-281-8802 Art Herbig art.herbig@avnet.com
Sea Union 9F-1, Building A, No 19-3 San-Chung Road Nankang Software Park Taiwan, ROC Taipei 115 02-2655-3989 fax: 02-2655-3918 Murphy Su murphy@seaunionweb.com.tw France 4 Allee du Cantal Evry, Cedex France 33 16079 5900 fax: 33 16079 8903 sales.fr@ bfioptilas.avnet.com Holland Chr. Huygensweg 17 2400 AJ ALPHEN AAN DEN RIJN The Netherlands 31 172 446060 fax: 33 172 443414 sales.nl@ bfioptilas.avnet.com Spain C/Isobel Colbrand, 6 - 4a 28050 Madrid Spain 34 913588611 fax: 34 913589271 sales.es@ bfioptilas.avnet.com
Worldwide Distribution
United Kingdom Burnt Ash Road Aylesford, Kent England ME207XB 44 1622882467 fax: 44 1622882469 Belgium and Luxembourg rfsales.uk@ bfioptilas.avnet.com Cipalstraat 2440 GEEL Belgium 32 14 570670 fax: 32 14 570679 sales.be@bfioptilas.avnet.com
Sales Office Headquarters
United States (East Coast) Raytheon 362 Lowell Street Andover, MA 01810 978-684-8628 fax: 978-684-8646 Walter Shelmet wshelmet@ rrfc.raytheon.com
United States (West Coast) Raytheon 362 Lowell Street Andover, MA 01810 978-684-8919 fax: 978-684-8646 Rob Sinclair robert_w_sinclair@ rrfc.raytheon.com
Europe Raytheon AM Teckenberg 53 40883 Ratingen Germany 49-2102-706-155 fax: 49-2102-706-156 Peter Hales peter_j_hales@ raytheon.com
Asia Raytheon Room 601, Gook Je Ctr. Bldg 191 Hangang Ro 2-GA Yongsan-Gu, Seoul, Korea 140-702 82-2-796-5797 fax: 82-2-796-5790 T.G. Lee tg_lee@ rrfc.raytheon.com
Customer Support
www.raytheon.com/micro
978-684-8900
fax: 978-684-5452
customer_support@rrfc.raytheon.com
Characteristic performance data and specifications are subject to change without notice. Revised March 30, 2000 Page 6 Raytheon RF Components 362 Lowell Street Andover, MA 01810

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